8550 pnp silicon epitaxial planar transistor for switching and amplifie r applications. especially suitable for af-driver st ages and low power output stages. the transistor is subdivided in to four groups, b, c, d and e, according to its dc current gain. as complementary type the np n transistor st 8050 is recommended. on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 ) symbol value unit collector emitter voltage -v ceo 25 v collector base voltage -v cbo 40 v emitter base voltage -v ebo 6 v collector current -i c 800 ma peak collector current -i cm 1 a base current -i b 100 ma power dissipation p tot 625 1) mw junction temperature t j 150 o c storage temperature range t s -55 to +150 o c 1) valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
8550 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at -v ce =1v, -i c =100ma at -v ce =1v, -i c =350ma st 8550b st 8550c st 8550d st 8550e h fe h fe h fe h fe h fe 70 120 160 300 60 - - - - - 120 200 300 380 - - - - - - collector cutoff current at -v cb =35v i cbo - - 100 na collector saturation voltage at -i c =500ma, -i b =50ma v ce(sat) - - 0.5 v base saturation voltage at -i c =500ma, -i b =50ma v be(sat) - - 1.2 v collector emitter breakdown voltage at -i c =2ma v (br)ceo 25 - - v collector base breakdown voltage at -i c =10 a v (br)cbo 40 - - v emitter base breakdown voltage at -i e =100 a v (br)ebo 6 - - v gain bandwidth product at -v ce =5v, -i c =10ma, f=50mhz f t - 100 - mhz collector base capacitance at -v cb =10v, f=1mhz c cbo - 12 - pf thermal resistance junction to ambient r tha - - 200 1) k/w 1) valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
8550 st 8550 typical limits at tamb=25 c admissible power dissipation versus ambient temperature valid provided that leads are kept at ambient temperature at a distance of 2 mm from case st 8550 t amb p tot 0 0 0.2 100 0.4 0.6 1 0.8 w 150 c 2 o 10 -1 1 200 c o 10 2 5 10 2 5 -i c 2 5 0 1 -v be o collector current versus base emitter voltage 10 2 5 ma 3 25 c -50 c o o v2 2 r tha 0.2 1 v=0 10 t p - 6 - 4 1010 10 - 5 -1 2 - 1 - 2 10 10 - 3 10 t 10 1 0.01 5 0.005 2 tp tp v= t 0.05 0.02 5 0.1 2 10 s 10 p i pulse thermal resistance versus pulse duration valid provided that leads are kept at ambient temperature at a distance of 2 mm from case st 8550 k/w 10 10 2 0.5 5 2 5 3 2 100 2 0 1 2 10 5 5 2 10 t amb collector cutoff current versus ambient temperature na -i ces 2 5 3 10 5 10 4 st 8550
8550 200 -v ce -v be =0.7v 100 0 0 12v 0.75 st 8550 common emitter collector characteristics ma 400 300 500 -i c 0.9 0.85 0.8 -i c -v ce 100 0 0 200 0.4 -i b = 0.2ma 12v 0.8 0.6 1.2 1 common emitter collector characteristics 3.2 300 400 ma 500 1.8 1.4 1.6 2 2.4 st 8550 2.8 40 -i b =0.05ma 0 20 010 -v ce 20v 0.1 0.15 st 8550 0.35 0.25 ma 100 -i c 60 80 common emitter collector characteristics 0.3 0.2 dc current gain versus collector current 150 c 40 10 10 30 20 h fe 100 70 50 200 300 -1 1 10 t a m b = 2 5 c o 1000 700 400 500 -v ce =1v o 10 2 -i c 10 3 -50 c o st 8550
8550 st 8550 tamb=25 c f=20mhz -v ce =5v 7 1 10 2 4 3 5 10 10 525252 -i c 2 gain bandwidth product versus collector current 7 f t 10 2 2 4 3 5 mhz 10 3 1v o 3 10 ma -50 c st 8550 collector saturation voltage versus collector current =10 -ic -1 -i b 0.4 - v ce sat 0.1 10 0 0.3 0.2 0.5 v 10 150 c 1 o 10 25 c o 2 o typical limits at tamb=25 c o -i c 10 ma 3 10 ma -i c -50 c 0 -1 10 1 1 10 10 2 2 5 c o o 150 c o -i b -ic base saturation voltage versus collector current typical limits at tamb=25 c =10 v - v be sat 2 st 8550 o 3
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